METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE

A method for forming a contact of a semiconductor device is provided to prevent the deposition failure of a barrier layer due to the misalignment by forming a post second barrier layer after forming a first barrier layer by nitriding the exposed interlayer dielectric. A contact pad(101) is formed on...

Full description

Saved in:
Bibliographic Details
Main Author HAN, SANG YUP
Format Patent
LanguageEnglish
Published 16.09.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method for forming a contact of a semiconductor device is provided to prevent the deposition failure of a barrier layer due to the misalignment by forming a post second barrier layer after forming a first barrier layer by nitriding the exposed interlayer dielectric. A contact pad(101) is formed on a semiconductor substrate(100). An insulating layer(104) is formed on the overall structure including the contact pad. The contact hole exposing the contact pad is formed by etching the insulating layer. A first barrier layer(107) is formed in a lower part and a side of the contact hole by performing a plasma process. A contact plug(109) is formed in the contact hole including the first barrier layer. The thermal process is performed after the plasma process.
Bibliography:Application Number: KR20080022555