FABRICATING A CONTACT RHODIUM STRUCTURE BY ELECTROPLATING AND ELECTROPLATING COMPOSITION
A contact rhodium structure is fabricated by a process that comprises obtaining a substrate having a dielectric layer thereon, wherein the dielectric layer has cavities therein into which the contact rhodium is to be deposited; depositing a seed layer in the cavities and on the dielectric layer; and...
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Main Authors | , |
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Format | Patent |
Language | English Korean |
Published |
02.09.2009
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Subjects | |
Online Access | Get full text |
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Summary: | A contact rhodium structure is fabricated by a process that comprises obtaining a substrate having a dielectric layer thereon, wherein the dielectric layer has cavities therein into which the contact rhodium is to be deposited; depositing a seed layer in the cavities and on the dielectric layer; and depositing the rhodium by electroplating from a bath comprising a rhodium salt; an acid and a stress reducer; and then optionally annealing the structure. |
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Bibliography: | Application Number: KR20097012454 |