PHASE-CHANGE RANDOM ACCESS MEMORY CAPABLE OF PREVENTING COUPLING NOISE DURING READ WHILE WRITE OPERATION

• Main Authors: CHOI, BYUNG GIL, CHO, BEAK HYUNG
• Format: Patent
• Language: English
• Published: 26.08.2009
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A phase change memory device is provided to minimize a coupling noise by arranging a shielding unit between a write global bit line and a read global bit line. Local bit lines(LBL0-LBL7) are connected to memory cells(SCA). One or more write global bit lines(WGBL) are connected to the local bit lines...