PHASE-CHANGE RANDOM ACCESS MEMORY CAPABLE OF PREVENTING COUPLING NOISE DURING READ WHILE WRITE OPERATION
A phase change memory device is provided to minimize a coupling noise by arranging a shielding unit between a write global bit line and a read global bit line. Local bit lines(LBL0-LBL7) are connected to memory cells(SCA). One or more write global bit lines(WGBL) are connected to the local bit lines...
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
26.08.2009
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A phase change memory device is provided to minimize a coupling noise by arranging a shielding unit between a write global bit line and a read global bit line. Local bit lines(LBL0-LBL7) are connected to memory cells(SCA). One or more write global bit lines(WGBL) are connected to the local bit lines. One or more read global bits(RGBL) line are connected to the local bit lines. A plurality of banks are formed with a stack structure. A shielding unit is arranged between the adjacent write global bit line and the read global bit line. A ground voltage is applied to the shielding unit. |
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| AbstractList | A phase change memory device is provided to minimize a coupling noise by arranging a shielding unit between a write global bit line and a read global bit line. Local bit lines(LBL0-LBL7) are connected to memory cells(SCA). One or more write global bit lines(WGBL) are connected to the local bit lines. One or more read global bits(RGBL) line are connected to the local bit lines. A plurality of banks are formed with a stack structure. A shielding unit is arranged between the adjacent write global bit line and the read global bit line. A ground voltage is applied to the shielding unit. |
| Author | CHOI, BYUNG GIL CHO, BEAK HYUNG |
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| RelatedCompanies | SAMSUNG ELECTRONICS CO., LTD |
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| Snippet | A phase change memory device is provided to minimize a coupling noise by arranging a shielding unit between a write global bit line and a read global bit line.... |
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| Title | PHASE-CHANGE RANDOM ACCESS MEMORY CAPABLE OF PREVENTING COUPLING NOISE DURING READ WHILE WRITE OPERATION |
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