SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A semiconductor device and a manufacturing method thereof are provided to prevent generation of difference of an operation property of transistors by making a depth of an isolation film identical. A dummy active region is formed in order to make a depth of an isolation film region identical. The iso...

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Bibliographic Details
Main Author CHANG, MYOUNG SIK
Format Patent
LanguageEnglish
Published 20.08.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device and a manufacturing method thereof are provided to prevent generation of difference of an operation property of transistors by making a depth of an isolation film identical. A dummy active region is formed in order to make a depth of an isolation film region identical. The isolation film region is formed in both sides of an active region(A,B) of transistors. The transistors are latch transistors which selectively connect a folded bit line to a data bus. The active region and the isolation film region which defines the active region are formed. The dummy active region is formed in a wide region among the isolation film region of both sides of the active region of the transistors.
Bibliography:Application Number: KR20080014097