GAS SUPPLYING UNIT AND CHEMICAL VAPOR DEPOSITION APPARATUS

• Main Author: KANG, HYUNG DONG
• Format: Patent
• Language: English
• Published: 19.08.2009
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A gas supply unit and a chemical vapor deposition apparatus are provided to form a thin film of constant thickness by arranging a plurality of gas supply units, and to adjust a deposition rate by moving the gas supply unit and an object relatively. A gas supply unit(10) includes a heating line unit(12), an injecting unit(14), and a suction unit(16). The heating line unit decomposes reaction gas. The injecting unit injects the reaction gas to the heating line unit. The injecting unit includes an injector. The injector has a plurality of nozzles. The reaction gas is sprayed through a plurality of nozzles. The suction unit adjacent to the heating line unit discharges by-products of the reaction gas.