COMPOSITION FOR RESIST LOWER LAYER FILM FORMATION AND METHOD FOR PATTERN FORMATION

This invention provides a composition for resist lower layer film formation, which has excellent etching resistance and, in a dry etching process, is less likely to cause bending of a lower layer film pattern, and can transfer a resist pattern faithfully onto a substrate to be processed with high re...

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Bibliographic Details
Main Authors YOSHIMURA NAKAATSU, KONNO YOUSUKE
Format Patent
LanguageEnglish
Korean
Published 29.07.2009
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:This invention provides a composition for resist lower layer film formation, which has excellent etching resistance and, in a dry etching process, is less likely to cause bending of a lower layer film pattern, and can transfer a resist pattern faithfully onto a substrate to be processed with high reproducibility. The composition for resist lower layer film formation comprises (A) an aminated fullerene comprising at least one amino group attached to a fullerene skeleton and (B) a solvent.
Bibliography:Application Number: KR20097011442