FILM FORMATION METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS
A film formation method and a film formation apparatus for semiconductor processing are provided to improve characteristics of a device by controlling accurately elements of a silicon nitride layer. A film forming apparatus(2) includes a processing receptacle(4), a supporting member, a heater(86), a...
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Main Authors | , , , , |
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Format | Patent |
Language | English Korean |
Published |
23.07.2009
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Subjects | |
Online Access | Get full text |
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Summary: | A film formation method and a film formation apparatus for semiconductor processing are provided to improve characteristics of a device by controlling accurately elements of a silicon nitride layer. A film forming apparatus(2) includes a processing receptacle(4), a supporting member, a heater(86), an exhaust system(GE), a first processing gas supply system(30), a second processing gas supply system(28), an excitation unit, and a control unit(60). The processing receptacle has a processing area for receiving a processing target substrate. The supporting member supports the processing target substrate in the processing area. The heater heats the processing substrate within the processing area. The exhaust system exhausts the processing area. The first processing gas supply system supplies a first processing gas including a silane-based gas to the processing area. The second processing gas supply system supplies a second processing gas including a nitrous gas to the processing area. The excitation unit performs an excitation operation while the second processing gas supply system supplies the second processing gas to the processing area. The controller controls operations of the film forming apparatus. |
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Bibliography: | Application Number: KR20090003552 |