SILICIDE FORMATION ON A WAFER

A method of selective formation of suicide on a semiconductor wafer, wherein the metal layer (12) is deposited over the entire wafer prior to application of the SiProt mask (10, 16, 22) such that any etching of the mask (10, 16, 22) does not cause any surface deterioration of the silicon wafer.

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Bibliographic Details
Main Authors KORDIC SRDJAN, GERRITSEN ERIC, DE JONGHE VERONIQUE
Format Patent
LanguageEnglish
Korean
Published 13.07.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of selective formation of suicide on a semiconductor wafer, wherein the metal layer (12) is deposited over the entire wafer prior to application of the SiProt mask (10, 16, 22) such that any etching of the mask (10, 16, 22) does not cause any surface deterioration of the silicon wafer.
Bibliography:Application Number: KR20097008635