METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

A manufacturing method of the semiconductor device and a substrate processing apparatus for the same are provided, which can suppress the generation of the popping phenomenon in the resist removal progress. The reaction container(431) can be decompressed and performs the plasma processing of the rea...

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Bibliographic Details
Main Authors KAKUDA TORU, HIYAMA SHIN, HIROCHI YUKITOMO
Format Patent
LanguageEnglish
Korean
Published 13.07.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A manufacturing method of the semiconductor device and a substrate processing apparatus for the same are provided, which can suppress the generation of the popping phenomenon in the resist removal progress. The reaction container(431) can be decompressed and performs the plasma processing of the reaction gas. The spiral resonator has the resonant coil and outer side shield. The outer side shield is electrically earthed while being arranged in the circumference of the resonant coil. The process chamber(445) accommodates substrate successively while being installed at the reaction container. The power source(444) supplies the electricity to the resonant coil. The reacting gas providing unit supplies the reaction gas to the reaction container. The flux controlling part controls the flow rate of the reaction gas supplied by the reacting gas providing unit.
Bibliography:Application Number: KR20080129746