METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A method for fabricating a semiconductor device is provided to form a glue layer and an ohmic contact layer at the same time in order to simplify a fabricating process without separate thermal treatment, thereby reducing production costs. An insulating layer(101) having a contact hole formed therein...

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Bibliographic Details
Main Authors JANG, PHIL SOON, LEE, DONG KEE
Format Patent
LanguageEnglish
Korean
Published 07.07.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating a semiconductor device is provided to form a glue layer and an ohmic contact layer at the same time in order to simplify a fabricating process without separate thermal treatment, thereby reducing production costs. An insulating layer(101) having a contact hole formed therein is formed on a substrate(100). A glue layer(103) is formed along the inner surface of the contact hole at the same time an ohmic contact layer(104) is formed by reacting the glue layer to the substrate. A diffusion barrier layer is formed on the glue layer. A contact plug is formed on the diffusion barrier layer to pad the contact hole. The glue layer is formed at 500~800°C.
Bibliography:Application Number: KR20080000358