METHOD OF MANUFACTURING A TRANSISTOR

A method for manufacturing a MOS transistor is provided to reduce the manufacturing process by omitting a doping mask formation step for the threshold voltage control of the LDMOS(Lateral Diffusion MOS) transistor. A first well(240) is formed on a silicon substrate(210). A first mask pattern is form...

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Bibliographic Details
Main Author KIM, BONG KIL
Format Patent
LanguageEnglish
Korean
Published 03.07.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a MOS transistor is provided to reduce the manufacturing process by omitting a doping mask formation step for the threshold voltage control of the LDMOS(Lateral Diffusion MOS) transistor. A first well(240) is formed on a silicon substrate(210). A first mask pattern is formed on the silicon substrate. A second well(245) is formed by using the first mask pattern. A second mask pattern is formed on the silicon substrate. The first drift region(260) is formed by using the second mask pattern. A third mask pattern is formed on the silicon substrate. The second drift rgion(270) is formed by using the third mask pattern. A field oxide film(275) is formed on the silicon substrate. A first conductivity type impurity ion is ion-implanted in the silicon substrate front.
Bibliography:Application Number: KR20070141354