PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, CONTROL PROGRAM AND COMPUTER-READABLE STORAGE MEDIUM

A plasma etching method, a plasma etching apparatus, and a control program and a computer storage device are provided to form the hole shape by plasma-etching the oxide silicon layer. An oxide layer(102) and an SiN layer(103) are formed in a silicon substrate(101). An amorphous carbon layer(105), an...

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Bibliographic Details
Main Authors INOUE FUMIO, OOYA YOSHINOBU, TANAKA SATOSHI
Format Patent
LanguageEnglish
Korean
Published 01.07.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A plasma etching method, a plasma etching apparatus, and a control program and a computer storage device are provided to form the hole shape by plasma-etching the oxide silicon layer. An oxide layer(102) and an SiN layer(103) are formed in a silicon substrate(101). An amorphous carbon layer(105), an SiON layer(106), and an O-ARC film(107) are formed on an oxide silicon layer(104) as carbon-contained layers. A patterned photoresist layer(108) is formed on the upper part of the O-ARC film into the desired pattern. An opening(109) of pattern is formed in the photoresist layer.
Bibliography:Application Number: KR20080134494