METHOD OF MANUFACTURING A TRANSISTOR

A method for manufacturing a transistor is provided to improve a matching characteristic between transistors by obtaining a thick gate oxide layer with a self-align effect in a source/drain implantation process. A photoresist pattern is formed in a semiconductor substrate(100) with a shallow trench...

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Bibliographic Details
Main Author KIM, BONG KIL
Format Patent
LanguageEnglish
Korean
Published 01.07.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a transistor is provided to improve a matching characteristic between transistors by obtaining a thick gate oxide layer with a self-align effect in a source/drain implantation process. A photoresist pattern is formed in a semiconductor substrate(100) with a shallow trench isolation. A drift region(450) is formed by implanting a first impurity ion and a second impurity ion by using the photo resist pattern as the mask. An ion implant cleansing process and an annealing process are performed in the semiconductor substrate. A gate oxide layer(500) is formed in the upper part of the semiconductor substrate. A poly gate(600) is formed in the upper part of the oxide layer. A source and drain region is formed in the region separated from the poly gate with a constant distance. A silicide layer is formed on the structure.
Bibliography:Application Number: KR20070138833