TOP NOZZLE AND SUBSTRATE TREATMENT APPARATUS

• Main Author: WON, JUN HO
• Format: Patent
• Language: English; Korean
• Published: 01.07.2009
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A top nozzle and a substrate processing apparatus are provided to improve cleaning efficiency by preventing the leakage of the cooling gas of an electrostatic chuck and a particle. A chuck is arranged in a process chamber and supports a substrate. A top nozzle(140) is arranged in the upper part of the process chamber and supplies the process gas and the cleaning gas to the process chamber. The top nozzle includes a first body(142), a second body(144), and a third body(148). The first body has a tube shape with a process gas path. The second body is extended from the first body downwardly and has a plate shape with the larger diameter than the first body. The third body has a cleaning gas path inside and has the tube shape which is positioned in the upper part of the second body. The second body passes through from the upper part to the lower part.