P-N HOMOJUNCTION FOR A DYE-SENSITIZED SOLAR CELL AND METHOD FOR PREPARATION THEREOF

• Main Authors: DOH, SEOK JOO, KIM, CHAM, LEE, SE GEUN, LEE, SUNG JUN
• Format: Patent
• Language: English
• Published: 29.06.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

P-N homojunction for a dye-sensitive solar cell and a manufacturing method thereof are provided to reduce electron recombination and to improve efficiency of the solar cell by using a doped metal oxide. A method for manufacturing P-N homojunction for a dye-sensitive solar cell comprises the following steps of: preparing metal oxide sol and mixing polymeric binder to the metal oxide sol in order to obtain metal oxide paste; forming a doped metal oxide sol and mixing the polymeric binder to the doped metal oxide sol in order to obtain doped metal oxide paste; coating the metal oxide paste on a conductive substrate and sintering it to obtain n-type semiconductor layer; and coating the doped metal oxide paste on the n-type semiconductor layer and sintering it to obtain p-type semiconductor layer.