ION TILTING IMPLANTATION METHOD

A method for distributing a film uniformly in a longitudinal direction of an atom is provided to reduce ion implantation time by implementing uniform distribution through a single process. A desired thickness for ion implantation is selected. Ion beam energy and incident angle are calculated in acco...

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Bibliographic Details
Main Authors KIM, JOON KON, KIM, GI DONG, EUM, CHUL HUN
Format Patent
LanguageEnglish
Published 25.06.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for distributing a film uniformly in a longitudinal direction of an atom is provided to reduce ion implantation time by implementing uniform distribution through a single process. A desired thickness for ion implantation is selected. Ion beam energy and incident angle are calculated in accordance with the selected thickness for ion implantation. Irradiation dose requested for ion etching in implanting the calculated ion beam energy at the incident angle is calculated. Element composition for ion implantation is determined through electronic simulation of ion implantation and ion etching.
Bibliography:Application Number: KR20070135728