OPTICAL STORAGE MEDIUM COMPRISING A MASK LAYER WITH A SUPER RESOLUTION NEAR FIELD STRUCTURE

The optical storage medium according to the invention uses a mask layer (2) as a super resolution near field structure, which comprises a doped semiconductor material. The semiconductor material is n-doped particularly such that the reflectivity of the semiconductor material is increased, when irrad...

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Bibliographic Details
Main Authors PILARD GAEL, KNAPPMANN STEPHAN, FERY CHRISTOPHE, PACEARESCU LARISA
Format Patent
LanguageEnglish
Published 18.06.2009
Subjects
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
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Summary:The optical storage medium according to the invention uses a mask layer (2) as a super resolution near field structure, which comprises a doped semiconductor material. The semiconductor material is n-doped particularly such that the reflectivity of the semiconductor material is increased, when irradiated with a laser beam. As a semiconductor material advantageously an indium alloy and as a doping material selenium or tellurium can be used. For the manufacturing of a respective optical storage medium a sputtering method for depositing the doped semiconductor material as the mask layer can be used, wherein the dopant is included already in the semiconductor sputtering target.
Bibliography:Application Number: KR20097006650