SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: KIM, TAE YOUB, AHN, CHANG GEUN, KIM, AN SOON, AH, CHIL SEONG, PARK, CHAN WOO, JANG, MOON GYU, BAEK, IN BOK, YANG, JONG HEON, YU, HAN YOUNG, JUN, MYUNG SIM
• Format: Patent
• Language: English
• Published: 10.06.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MEASURING; NANOTECHNOLOGY; PERFORMING OPERATIONS; PHYSICS; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TESTING; TRANSPORTING

A semiconductor nano wire sensor and a manufacturing method thereof are provided to implement a silicon nano wire channel of a line width with several nano meters by using a photolithographic process. A first conductive single crystal silicon line pattern is formed in the uppermost layer of an SOI(Silicon On Insulator) substrate. A second conductive channel(216b) is formed in both ends of the line width direction of the first conductive single crystal silicon line pattern. The second conductive pad is formed in both sides of the longitudinal direction of the first conductive single crystal silicon line pattern. A first electrode(242) for applying a reverse bias voltage is formed in an undoped region of the first conductive single crystal silicon line pattern. A second electrode(232) for applying the bias voltage to both sides of the second conductive channel is formed on the second conductive pad.