SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

A semiconductor device and a method for manufacturing thereof is provided to reduce parasitic capacitance between a source region, a drain region, and contact plug by expanding valid area of the source and the drain region through control of the position of a gate electrode. A gate electrode(30) is...

Full description

Saved in:
Bibliographic Details
Main Author KIM, SEON HEUI
Format Patent
LanguageEnglish
Published 08.06.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor device and a method for manufacturing thereof is provided to reduce parasitic capacitance between a source region, a drain region, and contact plug by expanding valid area of the source and the drain region through control of the position of a gate electrode. A gate electrode(30) is formed on a semiconductor substrate, and a spacer is formed at the side wall of the gate electrode. A source region(60) and a drain region(70) are formed on the semiconductor substrate of both sides of the gate electrode. An insulating layer is arranged on the processed substrate, and a contact plug is connected to a gate electrode, the source region, and the drain region. A source region(65) includes an additional source region which is expanded from the reside of the gate.
Bibliography:Application Number: KR20070124090