METAL LINE FABRICATION METHOD OF CMOS IMAGE SENSOR

• Main Author: KIM, HYOUNG YOON
• Format: Patent
• Language: English
• Published: 03.06.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A metal line fabrication method of CMOS image sensor is provided to prevent the break down of the metal wiring and improve the transmission capability of the current of the metal wiring by using the titanium silicide film. The metal line fabrication method of CMOS image sensor comprises the formation step of the contact hole applied to the semiconductor substrate(200), and the formation step of the contact plug(206) and the formation step of the first titanium layer(208). The semiconductor substrate has the bottom metal wiring(202) and inter-layer insulating film(204). The inter-layer insulating film covers the bottom metal wiring. The formation step of the contact hole is performed to pattern the inter-layer insulating film and form the contact hole on the inter-layer insulating film. The contact hole is formed in order to expose the down metal wiring through the inter-layer insulating film. The formation step of the contact plug is performed form the contact plug on the inter-layer insulating film in order to fill up the contact hole. The formation step of the first titanium layer is performed to form the first titanium layer on the inter-layer insulating film in order to cover the contact plug.