METHOD FOR FORMING POLY-SILICON FILM

• Main Authors: MIYAHARA TAKAHIRO, OKADA MITSUHIRO, NISHIMURA TOSHIHARU
• Format: Patent
• Language: English
• Published: 16.04.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for forming a poly-silicon film is provided to perform a process of growing a film by using a diameter control gas including an element promoting a poly-silicon film fine. A wafer boat(20) is heated by a heater(4), and a wafer boat is received from a down opening of a reaction tube(10) insi...