METHOD FOR FORMING POLY-SILICON FILM

A method for forming a poly-silicon film is provided to perform a process of growing a film by using a diameter control gas including an element promoting a poly-silicon film fine. A wafer boat(20) is heated by a heater(4), and a wafer boat is received from a down opening of a reaction tube(10) insi...

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Bibliographic Details
Main Authors MIYAHARA TAKAHIRO, OKADA MITSUHIRO, NISHIMURA TOSHIHARU
Format Patent
LanguageEnglish
Published 16.04.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming a poly-silicon film is provided to perform a process of growing a film by using a diameter control gas including an element promoting a poly-silicon film fine. A wafer boat(20) is heated by a heater(4), and a wafer boat is received from a down opening of a reaction tube(10) inside a platform(16). The forming gas supply source(25) supplies a forming gas to an inner tube(12) through a gas pipe line(26). A doping gas source(29) supplies the doping gas to the inner tube through the gas pipe line(30). The diameter control gas source(33) supplies the gas to the inner tube through the gas pipe line(34). An amorphous silicon film is accumulated by performing processes of growing a film with it, and a purge gas is supplied to a reaction tube from the gas pipe line. The amorphous silicon film is transformed to the polysilicon layer through an annealing process.
Bibliography:Application Number: KR20080099372