TRANSFER APPARATUS FOR SUBSTRATE

A method of manufacturing a wafer is provided to control the unloading temperature of wafer by cooling the wafer at the natural cooling method or the air cooling method. A wafer is put into a load lock chamber. A handling robot transfers the wafer from the load lock chamber to a process chamber(S11)...

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Bibliographic Details
Main Author LIM, HONG KANG
Format Patent
LanguageEnglish
Published 01.04.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a wafer is provided to control the unloading temperature of wafer by cooling the wafer at the natural cooling method or the air cooling method. A wafer is put into a load lock chamber. A handling robot transfers the wafer from the load lock chamber to a process chamber(S11). The temperature of the process chamber reaches the prescribed temperature(S12). A wand unit settles the wafer in a susceptor(S13). The wafer fabrication process is performed(S14). The poly silicon layer is formed on the wafer by providing the source gas including silicon. The wafer is transferred to the load lock chamber. In the wafer transfer process, the temperature of the process chamber becomes the second temperature lower than the first temperature(S15). The wafer unloading process is performed(S16).
Bibliography:Application Number: KR20070098330