DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR
A display device and a manufacturing method therefor are provided to form a thin film transistor having no affect of foreign materials or contamination on a gate insulating film on a substrate. A gate electrode(GT1) is formed on a substrate(SUB1) made of glass. A silicon nitride film(2) is formed to...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
16.03.2009
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Subjects | |
Online Access | Get full text |
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