DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR

• Main Authors: OUE EIJI, MIYAKE HIDEKAZU, KAITOU TAKUO, TAKASHINA YUICHIRO, MIYAZAWA TOSHIO
• Format: Patent
• Language: English
• Published: 16.03.2009
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

A display device and a manufacturing method therefor are provided to form a thin film transistor having no affect of foreign materials or contamination on a gate insulating film on a substrate. A gate electrode(GT1) is formed on a substrate(SUB1) made of glass. A silicon nitride film(2) is formed to cover the gate electrode. In an upper side of the silicon nitride film, a silicon oxide film is selectively formed by hooking the gate electrode. The silicon oxide film is formed only in a lower layer of a pseudo single crystal layer and is not flatly extended to the outside. A high concentration n-type amorphous silicon layer(7a) is interposed in interfaces of a drain electrode and an amorphous silicon layer. A high concentration n-type amorphous silicon layer(7b) is interposed in interfaces of a source electrode and the amorphous silicon layer. n the upper side of the thin film transistor, the silicon nitride film(8) is covered.