FLASH MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

• Main Authors: CHANG, HEE HYUN, JANG, PHIL SOON
• Format: Patent
• Language: English
• Published: 25.02.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A flash memory device and a manufacturing method thereof are provided to remove an EFH(Effective Field Oxide Height) control process of an element isolation layer by forming a dielectric layer made of high dielectric material between a floating gate and a control gate. A flash memory device includes...