FLASH MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

• Main Authors: CHANG, HEE HYUN, JANG, PHIL SOON
• Format: Patent
• Language: English
• Published: 25.02.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A flash memory device and a manufacturing method thereof are provided to remove an EFH(Effective Field Oxide Height) control process of an element isolation layer by forming a dielectric layer made of high dielectric material between a floating gate and a control gate. A flash memory device includes a tunnel insulating layer(102a), a floating gate, an element isolation layer(110), a dielectric layer(112) and a control gate. The tunnel insulating layer and the floating gate are stacked in an active region of a semiconductor substrate(100). The element isolation layer is formed in an inactive region of the semiconductor substrate. The element isolation layer is protruded higher than the floating gate. The dielectric layer is formed on the semiconductor substrate including the floating gate and the element isolation layer. The control gate is formed in the upper part of the dielectric layer. The element isolation layer is protruded higher than the floating gate as much as 300 or 500 angstrom. The dielectric layer is made of the high dielectric material.