FLASH MEMORY DEVICES AND METHODS OF FABRICATING THE SAME

The flash memory device and manufacturing method thereof are provided to prevent the electric charge tunneling between the gate electrodes and charge trapping layer and to improve data retention characteristic. The tunnel insulating layer(130) is formed on the substrate(110). The charge trapping lay...

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Bibliographic Details
Main Authors KUH, BONG JIN, CHUNG, CHUN HYUNG, KIM, SUN JUNG, KIM, YOUNG SUN, LEE, SEUNG HWAN, CHOI, HOON SANG, LIM, SANG WOOK
Format Patent
LanguageEnglish
Published 14.01.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The flash memory device and manufacturing method thereof are provided to prevent the electric charge tunneling between the gate electrodes and charge trapping layer and to improve data retention characteristic. The tunnel insulating layer(130) is formed on the substrate(110). The charge trapping layer(140) is formed on the tunnel insulating layer. The lower buffer layer(150) is formed on the charge trapping layer. The blocking film(160) is formed on the lower buffer layer. The first gate electrode(170) is formed on the blocking film. The second gate electrode(180) is formed on the first gate electrode. The lower buffer layer comprises the blocking film having no silicon. The blocking layer includes 3 element lanthanum compound.
Bibliography:Application Number: KR20070068844