METHOD FOR FABRICATING A DIELECTRIC FILM, DIELECTRIC FILM AND METHOD FOR GAP-FILLING SEMICONDUCTOR DEVICE USING THE SAME

The method for fabricating a dielectric film, dielectric film and method for gap-filling semiconductor device using the same are provided to improve the step coverage and gap-fill capability in the relatively low temperature and the low pressure by using 3 MS(trimethyl-silane) and O3. The substrate...

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Bibliographic Details
Main Authors YOU, DONG HO, LEE, KI HOON
Format Patent
LanguageEnglish
Published 09.01.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The method for fabricating a dielectric film, dielectric film and method for gap-filling semiconductor device using the same are provided to improve the step coverage and gap-fill capability in the relatively low temperature and the low pressure by using 3 MS(trimethyl-silane) and O3. The substrate is settled on the substrate support within the reactor(S210). The pressure within the temperature of the substrate and the reactor are controlled(S220). The temperature of substrate is maintained in 600 °C through 100. The pressure within the reactor is maintained in 760 Torr through 1. The SiO2 thin film is deposited by the thermal chemical vapor deposition using the source gas including 3MS and O3. The SiO2 thin film is heat-treated(S230)..
Bibliography:Application Number: KR20070067421