A NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

A non-volatile memory device and a manufacturing method thereof are provided to improve the interfacial property between the tunneling insulating layer and the trench. A non-volatile memory device comprises an element isolation film, an active area, a tunneling insulating layer, a floating gate(102)...

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Bibliographic Details
Main Author PARK, HEE SIK
Format Patent
LanguageEnglish
Published 09.01.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A non-volatile memory device and a manufacturing method thereof are provided to improve the interfacial property between the tunneling insulating layer and the trench. A non-volatile memory device comprises an element isolation film, an active area, a tunneling insulating layer, a floating gate(102), a spacer, a dielectric film(107) and a control gate(108). The element isolation film is formed in the substrate into the line-shape. The active area is formed in order to be restricted by the element isolation film. The tunneling insulating layer is formed on the active area. The floating gate is formed on the tunneling insulating layer with the island shape. The spacer is formed on side wall of the floating gate. The dielectric film is formed on the floating gate and the element isolation film.
Bibliography:Application Number: KR20070066127