METHOD FOR FABRICATING PHASE SHIFT MASK IN SEMICONDUTOR DEVICE

• Main Author: YOU, TAE JUN
• Format: Patent
• Language: English
• Published: 08.01.2009
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

A method for forming a phase shift mask of a semiconductor device is provided to form a spacer for controlling TM polarizing component on the side wall of a phase shift layer patten of a dense pattern region so that image contrast according to difference of pattern density is improved. Provided is a transparent substrate(100) defined as a domain(A) in which a dense pattern is molded and a domain(B) in which an isolated pattern is molded. A phase shift layer and light shield layer are formed on the transparent substrate. A first resist pattern which selectively exposes a light shield layer on the light shield layer is molded. A light shield layer and a phase shift layer exposed by a first resist layer pattern are selectively etched so that the light shield film pattern and phase shift layer pattern(111) are formed. The first resist pattern and light shield film pattern are removed. A sidewall spacer film is formed on the transparent substrate in which the phase shift layer pattern are formed. A second resist layer pattern exposing the dense domain on the transparent substrate in which the sidewall spacer film is formed is molded. A spacer(141) is formed in the phase shift layer patten side wall of the dense pattern region by anisotropically etching the sidewall spacer film exposed by the second resist layer pattern. After the second resist layer pattern is removed, the sidewall spacer film formed in the isolated pattern region by using a third resist film pattern exposing the isolated pattern region is removed.