METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

A method for manufacturing a semiconductor device is provided to improve uniformity of the line width of a lower electrode by protecting an insulating layer pattern by a first spacer in a cleaning process to remove a native oxide layer. An insulating layer pattern which restricts an opening exposing...

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Bibliographic Details
Main Authors OH, GYU HWAN, LIM, NAK HYUN, KANG, SHIN JAE, PARK, IN SUN, LIM, HYUN SEOK, KIM, TAE YEOL
Format Patent
LanguageEnglish
Published 07.01.2009
Subjects
ELECTRICITY
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Summary:A method for manufacturing a semiconductor device is provided to improve uniformity of the line width of a lower electrode by protecting an insulating layer pattern by a first spacer in a cleaning process to remove a native oxide layer. An insulating layer pattern which restricts an opening exposing a semiconductor substrate(100) partially and is protruded than the substrate surface from an inner part of the substrate. A first spacer(114) including the nitride is formed in the side of the insulating layer pattern. A second spacer(116) including the oxide is formed on the first spacer. An epitaxial silicon film is formed on the exposed substrate to reclaim a part of the opening. A cleaning process is performed to remove the native oxide film generated on the surface of the epitaxial silicon film. The ohmic layer(134) is formed on the epitaxial silicon film.
Bibliography:Application Number: KR20070064367