TRANSISTOR, INTEGRATED CIRCUIT AND METHOD OF FORMING AN INTEGRATED CIRCUIT
An integrated circuit and a manufacturing method thereof are provided to manufacture the DRAM memory cell array with the high reliability by using the conductive carbon material. An integrated circuit comprises the transistor(20). The transistor comprises the gate electrode(23). The gate electrode i...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
04.12.2008
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Subjects | |
Online Access | Get full text |
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