TRANSISTOR, INTEGRATED CIRCUIT AND METHOD OF FORMING AN INTEGRATED CIRCUIT

An integrated circuit and a manufacturing method thereof are provided to manufacture the DRAM memory cell array with the high reliability by using the conductive carbon material. An integrated circuit comprises the transistor(20). The transistor comprises the gate electrode(23). The gate electrode i...

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Bibliographic Details
Main Authors HARTWICH JESSICA, GRAHAM ANDREW, SCHOLZ ARND
Format Patent
LanguageEnglish
Published 04.12.2008
Subjects
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