TRANSISTOR, INTEGRATED CIRCUIT AND METHOD OF FORMING AN INTEGRATED CIRCUIT

An integrated circuit and a manufacturing method thereof are provided to manufacture the DRAM memory cell array with the high reliability by using the conductive carbon material. An integrated circuit comprises the transistor(20). The transistor comprises the gate electrode(23). The gate electrode i...

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Bibliographic Details
Main Authors HARTWICH JESSICA, GRAHAM ANDREW, SCHOLZ ARND
Format Patent
LanguageEnglish
Published 04.12.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An integrated circuit and a manufacturing method thereof are provided to manufacture the DRAM memory cell array with the high reliability by using the conductive carbon material. An integrated circuit comprises the transistor(20). The transistor comprises the gate electrode(23). The gate electrode is positioned within the gate groove(27) formed in the semiconductor substrate. The gate electrode comprises the conductive carbon material. The gate electrode more includes the conductivity filler(25). The conductive carbon material is layer on the gate dielectric(24) layer. A portion of the gate groove is filled by the conductive carbon material. The insulating layer is arranged on the surface of the conductive carbon material.
Bibliography:Application Number: KR20080051111