METHOD FOR FABRICATING NONVOLATILE MEMORY DEVICE

• Main Author: CHOI, SE KYOUNG
• Format: Patent
• Language: English
• Published: 27.11.2008
• Subjects: ELECTRICITY

A manufacturing method of the non-volatile memory device is provided to improve the program disturbance property without the degradation of the element performance. A manufacturing method of the non-volatile memory device includes the step for forming the first and the second selection transistors and a plurality of memory cells on the substrate(10); the step for forming the first junction unit(20A) by injecting the first impurity ion into the first and the second selection transistor and a plurality of memory cells; the step for forming the second junction unit(20B) by injecting the second impurity ion into the semiconductor substrate between the second selection transistor and the memory cell adjacent to the first selection transistor.