A NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

The repetitive inscribe and erase operation property of device can be improved by compensating the damage of the active area and the tunneling oxide film contacting with the corner part of the top of the trench in the STI process. The nonvolatile memory comprises the tunneling insulating layer(101A)...

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Bibliographic Details
Main Author PARK, HEE SIK
Format Patent
LanguageEnglish
Published 12.11.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The repetitive inscribe and erase operation property of device can be improved by compensating the damage of the active area and the tunneling oxide film contacting with the corner part of the top of the trench in the STI process. The nonvolatile memory comprises the tunneling insulating layer(101A) formed on the element substrate; the charge transfer preventing film thickly formed in both parts of the tunneling insulating layer than the tunneling insulating layer(106); the floating gate formed in upper part to overlap the tunneling insulating layer and charge transfer preventing film(102).
Bibliography:Application Number: KR20070044306