PHOTOMASK HAVING SCATTERING NOISE PATTERNS

A photo mask having scattering noise patterns is provided to restrain a pattern defect with respect to a pattern in a dark field region by inserting a scattering auxiliary pattern into the dark field region. A layout(200) includes a cell array region(215), a dark field region(210), and scattering no...

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Bibliographic Details
Main Author YOU, TAE JUN
Format Patent
LanguageEnglish
Published 16.10.2008
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A photo mask having scattering noise patterns is provided to restrain a pattern defect with respect to a pattern in a dark field region by inserting a scattering auxiliary pattern into the dark field region. A layout(200) includes a cell array region(215), a dark field region(210), and scattering noise auxiliary patterns. Cell patterns are repetitively and densely arrange in the cell array region. Isolated patterns are arranged on the dark field region. The isolated patterns are arranged relatively away from another patterns adjacent to an outer of the cell array region. The scattering noise auxiliary patterns are inserted into the dark field region surrounding the isolated patterns. The isolated pattern is set as a test pattern having a shape and a size of the cell pattern in a scribe lane region. The test pattern is separated by at least 300 mum from the adjacent another patterns on a wafer.
Bibliography:Application Number: KR20070035995