SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

• Main Authors: FUKUI SHOICHI, OKADA MASAKAZU, FURUSAWA TAKESHI, SUZUMURA NAOHITO, KAMOSHIMA TAKAO, AMISHIRO MASATSUGU
• Format: Patent
• Language: English
• Published: 25.09.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device and a method of manufacturing the same are provided to prevent electrically weak interface from being formed by interposing a second insulating layer between first and third insulating layers and making the second insulating layer have a higher density of the number of Si atoms than that of the first insulating film. A semiconductor device comprises a semiconductor substrate(1), a semiconductor element, a first insulating layer(11), a first opening(12), a first conductor part(13), a second insulating layer(14), a third insulating layer(15), a fourth insulating layer(16), a wire opening(17), and a first wire(20). The semiconductor element is formed in a main surface of the semiconductor substrate. The first insulating layer contains silicon and oxygen formed over the main surface in which the semiconductor element of the semiconductor substrate is formed. The first opening is formed in the first insulating layer. The first conductor part is embedded in the first opening. The second insulating layer contains silicon and oxygen formed over the first insulating layer. The third insulating layer contains silicon and carbon formed over the second insulating layer. The fourth insulating layer contains silicon and oxygen formed over the third insulating layer. The wire opening is formed in the second, third, and fourth insulating layers and which exposes at least part of the first conductor part at the bottom thereof. The first wire is embedded in the wire opening and electrically coupled with the first conductor part. The second insulating layer is a layer with a higher density of the number of Si atoms than that of the first insulating layer.