CAPACITORLESS DRAM AND METHOD OF MANUFACTURING AND OPERATING THE SAME

A capacitorless DRAM and a manufacturing and operating method thereof are provided to maintain a long channel length in a scale-down state by forming a vertical structure thereof. A first impurity region is formed on a substrate(200). A first protrusive part(210a) is formed on the substrate. A first...

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Bibliographic Details
Main Authors SHIN, JAI KWANG, JIN, YOUNG GU
Format Patent
LanguageEnglish
Published 19.09.2008
Subjects
ELECTRICITY
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Summary:A capacitorless DRAM and a manufacturing and operating method thereof are provided to maintain a long channel length in a scale-down state by forming a vertical structure thereof. A first impurity region is formed on a substrate(200). A first protrusive part(210a) is formed on the substrate. A first gate(220a) and a second gate(220b) are formed on the substrate of both sides of the first protrusive part. The height of the first and second gates is lower than the height of the first protrusive part. An insulating material layer(230) is inserted into the substrate, the first protrusive part, the first gate, and the second gate. A second impurity region is formed on the first protrusive part.
Bibliography:Application Number: KR20070024678