ELECTROLESS NIWP ADHESION AND CAPPING LAYERS FOR TFT COPPER GATE PROCESS

• Main Authors: LIN TSU AN, NASU AKINOBU, CHEN I CHUNG, HSIUNG CHIUNG SHENG, CHEN SHYUAN FANG
• Format: Patent
• Language: English
• Published: 14.08.2008
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Electroless NiWP layers are used for TFT Cu gate process. The NiWP deposition process comprises the following steps. (a) Cleaning of the base surface using for example UV light, ozone solution and/or alkaline mixture solution, (b) micro-etching of the base surface using, e.g. diluted acid, (c) catalyzation of the base surface using, e.g. SnCl 2 and PdCl2 solutions. (d) conditioning of the base surface using reducing agent solution, and (e) NiWP deposition. It has been discovered that NiWP layers deposited under certain conditions could provide good adhesion to the glass substrate and to the Cu layer with a good Cu barrier capability. A NiWP layer in useful for adhesion, capping and/or barrier layers for TFT Cu gate process (e.g. for flat screen display panels).