NONVOLATILE MEMORY DEVICE HAVING BURIED TYPE SPLIT GATE AND METHOD OF FABRICATING THE SAME

A nonvolatile memory device having a buried type split gate and a method for fabricating the same are provided to embed floating gates in trenches for precluding misalignment between the floating gates and active regions, thereby preventing mismatching of program/erasing characteristics between cell...

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Bibliographic Details
Main Authors KO, JEONG WOOK, UOM, JUNG SUP, LEE, KI JO, SEO, MOON SUN, PARK, SE JONG
Format Patent
LanguageEnglish
Published 28.07.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A nonvolatile memory device having a buried type split gate and a method for fabricating the same are provided to embed floating gates in trenches for precluding misalignment between the floating gates and active regions, thereby preventing mismatching of program/erasing characteristics between cells. A semiconductor substrate(200) has an active region. A pair of trenches(210) are separated from the active region. Coupling insulating layers(230) are formed in the trenches. Floating gates(240) are arranged on the coupling insulating layers. A source region(270) is formed at the active region. A pair of drain regions(280) are separated from the trenches respectively. A tunneling insulating layer(250) is formed on the floating gates and the substrate. A control gate(260) is formed on the tunneling insulating layer. Gate spacers(290) are formed at the side walls of the control gate.
Bibliography:Application Number: KR20070007248