APPARATUS AND PROCESS FOR PRODUCING HIGH-PURITY SILICON

This invention provides an apparatus and process for producing high-purity silicon that is suitable for the production of high-purity silicon having a purity of not less than 6 N suitable for solar cell applications, particularly high-purity silicon having a boron content of not more than 0.3 ppm by...

Full description

Saved in:
Bibliographic Details
Main Authors OKAZAWA KENSUKE, ITO NOBUAKI, TOKUMARU SHINJI, OKAJIMA MASAKI
Format Patent
LanguageEnglish
Published 23.07.2008
Subjects
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
Online AccessGet full text

Cover

More Information
Summary:This invention provides an apparatus and process for producing high-purity silicon that is suitable for the production of high-purity silicon having a purity of not less than 6 N suitable for solar cell applications, particularly high-purity silicon having a boron content of not more than 0.3 ppm by mass, using an inexpensive metallurgical grade metallic silicon as a raw material by slag refining on a commercial scale at low cost. In the apparatus and process for producing high-purity silicon by a slag refining method, direct electromagnetic induction heating means having the function of heating melt silicon within a crucible directly by electromagnetic induction heating is provided on the outer side of an outer wall face of the crucible. The crucible at least in its region where the melt silicon comes into contact with the inner wall surface of the crucible during non-electrification of the direct electromagnetic induction heating means is formed of an oxidation-resistant material.
Bibliography:Application Number: KR20087013670