METHOD OF FABRICATING SEMICONDUCTOR DEVICE

A method for manufacturing a semiconductor device is provided to obtain 1/2 pitch of a first pattern by using a self-alignment method in a post-process. A hard mask layer(130) and a photoresist pattern including silicon are formed on a target layer(120). An oxide layer pattern(160) is formed on a la...

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Bibliographic Details
Main Authors YOON, JIN YOUNG, KIM, HYUN WOO, JANG, YUN KYEONG, KANG, YOOL, YI, SHI YONG, CHOI, SANG JUN
Format Patent
LanguageEnglish
Published 16.07.2008
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