METHOD OF FABRICATING SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device is provided to obtain 1/2 pitch of a first pattern by using a self-alignment method in a post-process. A hard mask layer(130) and a photoresist pattern including silicon are formed on a target layer(120). An oxide layer pattern(160) is formed on a la...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
16.07.2008
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Subjects | |
Online Access | Get full text |
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Summary: | A method for manufacturing a semiconductor device is provided to obtain 1/2 pitch of a first pattern by using a self-alignment method in a post-process. A hard mask layer(130) and a photoresist pattern including silicon are formed on a target layer(120). An oxide layer pattern(160) is formed on a later surface and an upper surface of the photoresist pattern. A polymer layer(170) is formed on an entire surface of the target layer including the oxide layer pattern. A polymer layer pattern is formed by etching back the polymer layer. The oxide layer pattern is etched by using the polymer layer pattern and the photoresist pattern as mask layers. A hard mask layer pattern is formed by etching the hard mask layer. A target layer pattern is formed by etching the target layer. |
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Bibliography: | Application Number: KR20070003393 |