A SPUTTERING APPARATUS

• Main Authors: KIM, KANG SUK, AHN, YU KYEONG
• Format: Patent
• Language: English
• Published: 02.07.2008
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

A sputtering apparatus is provided to use a space before loading a substrate into a chamber and after unloading the substrate from the chamber by one, thereby reducing the bottom space. A sputtering apparatus(100) includes a vacuum chamber(102) for performing the sputtering. A substrate(106) is located at a side of the vacuum chamber. After completing a deposition process, the substrate is located at a substrate load/unloading member(104). The first plate(108) is equipped to the inside of the vacuum chamber and fixes the substrate for forming a preceding layer. Plural second plates(110a,110b,110c,110d) fix multi-targets(112a,112b,112c,112d) as thin film materials. A magnet is constructed at the outside of the vacuum chamber. The targets form an alloy layer constructed by maximum two kinds of compounds. Each target is a square shape or a similar type. Same power is inputted to plural second plates with the same target. According to the composition ratio of each target, the different DC power is inputted.