IGBT STACK STRUCTURE OF PLUGIN FORM

A plug-in type IGBT(Insulated Gate Bipolar Transistor) stack structure is provided to facilitate maintenance and repair by having only a structural bolt for installing a stack in a main power conversion device box structure without an electric bolt type. A central axis(31) is installed between two p...

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Bibliographic Details
Main Authors PARK, GEON TAE, KIM, YEON DAL, KIM, DU SIK, LEE, KWANG JOO
Format Patent
LanguageEnglish
Published 25.06.2008
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Summary:A plug-in type IGBT(Insulated Gate Bipolar Transistor) stack structure is provided to facilitate maintenance and repair by having only a structural bolt for installing a stack in a main power conversion device box structure without an electric bolt type. A central axis(31) is installed between two plates(30) in a horizontal direction. A heat pipe cooling device(39) is installed on upper parts of the plates. A plurality of heat pipes(40) are coupled onto the central axis at the same interval and connected to the heat pipe cooling device. Two freewheeling diodes(33) and two IGBTs(34) are formed between the heat pipes. A plug-in type plus bus bar(36), a minus bus bar(35), and an output bus bar(37) are formed on front surfaces of the heat pipes.
Bibliography:Application Number: KR20060131020