THE METHOD OF FORMING SEMICONDUCTOR DEVICE

A method for forming a semiconductor device is provided to prevent damage of a supporting structure in an oxide layer removal process. A second interlayer dielectric(115) is formed on a semiconductor substrate(100) including a first interlayer dielectric(105). A storage node insulating layer is form...

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Bibliographic Details
Main Authors KANG, DAE HYUK, HONG, CHANG KI, LEE, KUN TACK, HAN, DONG GYUN, SON, YOON HO, PARK, IM SOO
Format Patent
LanguageEnglish
Published 19.06.2008
Subjects
ELECTRICITY
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Summary:A method for forming a semiconductor device is provided to prevent damage of a supporting structure in an oxide layer removal process. A second interlayer dielectric(115) is formed on a semiconductor substrate(100) including a first interlayer dielectric(105). A storage node insulating layer is formed on the second interlayer dielectric. An opening is formed by etching the storage node insulating layer and the second interlayer dielectric. A storage node(130) and a burial insulating layer(135) are formed within the opening. A supporting structure(120a) is formed by patterning the storage node insulating layer. A protective layer pattern is formed to cover the supporting structure. The insulating layer is removed. The protective pattern is removed.
Bibliography:Application Number: KR20060128048