PATTERN GENERATION METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS

• Main Authors: SUZUKI JUNICHI, EMI KEIKO, ABE TAKAYUKI
• Format: Patent
• Language: English
• Published: 12.06.2008
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MATERIALS THEREFOR; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; ORIGINALS THEREFOR; PERFORMING OPERATIONS; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

A pattern generation method and a charged particle beam writing apparatus are provided to form a pattern on a target at highly accurate pattern dimension by correcting exposure dose of a charged particle beam to perform loading effect correction which is reduced during loading effect correction. A charged particle beam writing apparatus comprises a region of pattern, a correcting unit, and a pattern writing unit. The region of a pattern is included in every mesh-shaped region of a plurality of mesh-shaped regions that are divided imaginarily from a pattern forming region of a target. The correcting unit corrects an exposure dose of a charged particle beam to change dimension of a pattern(52) by using a total sum of lengths of outer circumferential sides of the pattern. The pattern writing unit writes the pattern onto the target by irradiating the charged particle beam with the corrected exposure dose, to obtain a corrected pattern(54).