FLASH MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

• Main Author: JANG, PHIL SOON
• Format: Patent
• Language: English
• Published: 10.06.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for manufacturing a flash memory device is provided to prevent bridge phenomenon among plural cells by forming a dielectric contact hole only on a cell region. A semiconductor substrate(200) on which a cell region and a dummy region are defined, is provided. A gate dielectric pattern(202a), a first conductive layer pattern(204a), and an isolation layer(210) are formed on the semiconductor substrate. A dielectric(212) is formed on upper portions of the isolation layer and the first conductive layer. A part of the dielectric on the cell region, where a selective transistor is formed, is removed to form a dielectric contact hole. A second conductive layer is formed on an upper portion of the entire structure including the dielectric contact hole. A length of the dummy region is 2 to 10 mum. Two or three dummy patterns are formed on the dummy regions. The dielectric contact hole is formed in a cell region direction from an upper portion of an active region that is adjacent the dummy region among the active region of the cell region.